A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

NAND flash memory use in digital still cameras and cellular phones is driving demand for larger-capacity storage. Moreover, NAND flash has the potential to replace HDDs. To achieve larger capacity while maintaining low cost per bit, technical improvements in feature size and area reduction are essen...

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Hauptverfasser: Kanda, Kazushige, Koyanagi, Masaru, Yamamura, Toshio, Hosono, Koji, Yoshihara, Masahiro, Miwa, Toru, Kato, Yosuke, Mak, Alex, Chan, Siu Lung, Tsai, Frank, Cernea, Raul, Le, Binh, Makino, Eiichi, Taira, Takashi, Otake, Hiroyuki, Kajimura, Norifumi, Fujimura, Susumu, Takeuchi, Yoshiaki, Itoh, Mikihiko, Shirakawa, Masanobu, Nakamura, Dai, Suzuki, Yuya, Okukawa, Yuki, Kojima, Masatsugu, Yoneya, Kazuhide, Arizono, Takamichi, Hisada, Toshiki, Miyamoto, Shinji, Noguchi, Mitsuhiro, Yaegashi, Toshitake, Higashitani, Masaaki, Ito, Fumitoshi, Kamei, Teruhiko, Hemink, Gertjan, Maruyama, Tooru, Ino, Kazumi, Ohshima, Shigeo
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Character generation
CMOS technology
Costs
Decoding
Driver circuits
Nonvolatile memory
Routing
Switches
Variable structure systems
Voltage
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Beschreibung
Zusammenfassung:NAND flash memory use in digital still cameras and cellular phones is driving demand for larger-capacity storage. Moreover, NAND flash has the potential to replace HDDs. To achieve larger capacity while maintaining low cost per bit, technical improvements in feature size and area reduction are essential. To meet the stringent requirements, we develop a 16 Gb 4-level NAND flash memory in 43 nm CMOS technology. In 43 nm generation, gate-induced drain leakage (GIDL) influences the electrical field on both sides of NAND strings. GIDL causes severe program disturb problems to NAND flash memories. To avoid GIDL, two dummy wordlines (WL) on both sides of NAND strings are added. This is effective because the dummy gate voltages, are selected independent of the program inhibit voltage.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2008.4523241