A 170GB/s 16Mb Embedded DRAM with Data-Bus Charge-Recycling

A 170GB/s 16Mb Embedded DRAM with Data-Bus Charge-Recycling

Embedded DRAM is well suited for integrated graphics applications that require extremely high bandwidth and large amounts of memory. High per-pin data rate, very wide I/O, and concurrent read/write together provide a high total data rate. The highest previous total data rate for a 16Mb macro reporte...

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Bibliographische Detailangaben
Hauptverfasser: Hardee, Kim, Parris, Michael, Jones, O. Fred, Butler, Doug, Mound, Mike, Jones, G.W., Egging, Tim, Arakawa, Tomofumi, Sasahara, Katsuhiko, Taniguchi, Kazuo, Miyabayashi, Masayuki
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
Clocks
Energy consumption
Error correction codes
Frequency
Graphics
Random access memory
Recycling
Timing
Writing
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Beschreibung
Zusammenfassung:Embedded DRAM is well suited for integrated graphics applications that require extremely high bandwidth and large amounts of memory. High per-pin data rate, very wide I/O, and concurrent read/write together provide a high total data rate. The highest previous total data rate for a 16Mb macro reported at this conference is 92GB/s. This work demonstrates a 16Mb DRAM macro test chip with data rates of 2.66Gb/s/pin and 170GB/s total.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2008.4523162