Application of Transistor Emitter-Open Turn-Off Scheme to High Voltage Power Inverters

Application of Transistor Emitter-Open Turn-Off Scheme to High Voltage Power Inverters

A transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Not only the transistor turn-off speed is greatly increased by using such a turn-off scheme but also the reverse-biased second breakdown phenomenon is eliminated. Therefore the ve...

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Veröffentlicht in:IEEE transactions on industry applications 1982-07, Vol.IA-18 (4), p.411-415
Hauptverfasser: Chen, Dan Y., Walden, John P.
Format: Artikel
Sprache:eng
Schlagworte:
Breakdown voltage
Circuits
Diodes
Electric breakdown
FETs
Frequency
Industry Applications Society
Inverters
Power electronics
Power transistors
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Zusammenfassung:A transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Not only the transistor turn-off speed is greatly increased by using such a turn-off scheme but also the reverse-biased second breakdown phenomenon is eliminated. Therefore the very same device can be fully utilized for higher voltage and higher frequency applications.
ISSN:0093-9994
1939-9367
DOI:10.1109/TIA.1982.4504101