Effect of intermittent spray on optoelectronic properties of ZnO nanocrystallites synthesized by chemical spray pyrolysis

Nanocrystalline ZnO films were synthesized by a chemical spray pyrolysis of zinc acetate solution. The deposition temperature (450degC) was kept constant by obstructing the spray after regular intervals. The XRD patterns of ZnO films were preferably oriented along c-axis (0 0 2) plane with the hexagonal wurtzite structure. The dependence of texture coefficient (TC) and standard deviation (sigmag) on spray obstruction time was also studied. The films synthesized were highly transparent (>94%) and conductive (dark conductivity 24.67 Omega-cm). The energy gap of the film was found to vary between 3.18 eV to 3.22 eV. The variation in sheet resistance (Omega/ ) and figure of merit (Phi TC ) was also studied in view of their possible applications in optoelectronic devices.