Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]

In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.

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Veröffentlicht in:Proceedings of the IEEE 2008-04, Vol.96 (4), p.748-748
Hauptverfasser: Rodwell, Mark J. W., Le, Minh, Brar, Berinder
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container_end_page 748
container_issue 4
container_start_page 748
container_title Proceedings of the IEEE
container_volume 96
creator Rodwell, Mark J. W.
Le, Minh
Brar, Berinder
description In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.
doi_str_mv 10.1109/JPROC.2008.918954
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_4457923</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4457923</ieee_id><sourcerecordid>903616720</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2660-fe192c5509d77a2820597ccd1786d8585c040e39c99a679d193b031e5eb0f6c13</originalsourceid><addsrcrecordid>eNp9kU1v1DAQhi0EEkvhByAu1h7gQrZjO_7iBhELWy1qVcoJIcvrTEqqbLy1k0P_PS5b9cCB00ij5x3NzEPIawYrxsCenl1cnjcrDmBWlhkr6ydkwaQ0FedSPSULAGYqy5l9Tl7kfAMAQiqxILdNTAnD1MeRTpEuN-MF_dQf4uAT3TT5A_0e_NCP1_Qy-nbvD_k9XSe8nXEMd3Tb7_updL75ce58mObkdwPSKwy_xzjE6x7zkv5c446CoVyzihv16yV51vkh46uHekJ-rD9fNV-r7fmXTfNxWwWuFFQdMsuDlGBbrT03HKTVIbRMG9UaaWSAGlDYYK1X2rbMih0IhhJ30KnAxAl5d5x7SLHsmye373PAYfAjxjk7C0IxpTkU8u1_SVHX5cdMFXD5D3gT5zSWK5xRZUWjbV0gdoRCijkn7Nwh9Xuf7hwDd-_K_XXl7l25o6uSeXPM9Ij4yNe11JYL8QfaYYwu</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>862828794</pqid></control><display><type>article</type><title>Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]</title><source>IEEE Electronic Library (IEL)</source><creator>Rodwell, Mark J. W. ; Le, Minh ; Brar, Berinder</creator><creatorcontrib>Rodwell, Mark J. W. ; Le, Minh ; Brar, Berinder</creatorcontrib><description>In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.</description><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/JPROC.2008.918954</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Conductivity ; Dielectrics ; Frequency ; Heterojunction bipolar transistors ; Indium gallium arsenide ; Paper technology ; Pulp manufacturing ; Semiconductor device doping ; Semiconductor device manufacture</subject><ispartof>Proceedings of the IEEE, 2008-04, Vol.96 (4), p.748-748</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2660-fe192c5509d77a2820597ccd1786d8585c040e39c99a679d193b031e5eb0f6c13</citedby><cites>FETCH-LOGICAL-c2660-fe192c5509d77a2820597ccd1786d8585c040e39c99a679d193b031e5eb0f6c13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4457923$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4457923$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Rodwell, Mark J. W.</creatorcontrib><creatorcontrib>Le, Minh</creatorcontrib><creatorcontrib>Brar, Berinder</creatorcontrib><title>Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.</description><subject>Bandwidth</subject><subject>Conductivity</subject><subject>Dielectrics</subject><subject>Frequency</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium gallium arsenide</subject><subject>Paper technology</subject><subject>Pulp manufacturing</subject><subject>Semiconductor device doping</subject><subject>Semiconductor device manufacture</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1v1DAQhi0EEkvhByAu1h7gQrZjO_7iBhELWy1qVcoJIcvrTEqqbLy1k0P_PS5b9cCB00ij5x3NzEPIawYrxsCenl1cnjcrDmBWlhkr6ydkwaQ0FedSPSULAGYqy5l9Tl7kfAMAQiqxILdNTAnD1MeRTpEuN-MF_dQf4uAT3TT5A_0e_NCP1_Qy-nbvD_k9XSe8nXEMd3Tb7_updL75ce58mObkdwPSKwy_xzjE6x7zkv5c446CoVyzihv16yV51vkh46uHekJ-rD9fNV-r7fmXTfNxWwWuFFQdMsuDlGBbrT03HKTVIbRMG9UaaWSAGlDYYK1X2rbMih0IhhJ30KnAxAl5d5x7SLHsmye373PAYfAjxjk7C0IxpTkU8u1_SVHX5cdMFXD5D3gT5zSWK5xRZUWjbV0gdoRCijkn7Nwh9Xuf7hwDd-_K_XXl7l25o6uSeXPM9Ij4yNe11JYL8QfaYYwu</recordid><startdate>200804</startdate><enddate>200804</enddate><creator>Rodwell, Mark J. W.</creator><creator>Le, Minh</creator><creator>Brar, Berinder</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>200804</creationdate><title>Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]</title><author>Rodwell, Mark J. W. ; Le, Minh ; Brar, Berinder</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2660-fe192c5509d77a2820597ccd1786d8585c040e39c99a679d193b031e5eb0f6c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Bandwidth</topic><topic>Conductivity</topic><topic>Dielectrics</topic><topic>Frequency</topic><topic>Heterojunction bipolar transistors</topic><topic>Indium gallium arsenide</topic><topic>Paper technology</topic><topic>Pulp manufacturing</topic><topic>Semiconductor device doping</topic><topic>Semiconductor device manufacture</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rodwell, Mark J. W.</creatorcontrib><creatorcontrib>Le, Minh</creatorcontrib><creatorcontrib>Brar, Berinder</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rodwell, Mark J. W.</au><au>Le, Minh</au><au>Brar, Berinder</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>2008-04</date><risdate>2008</risdate><volume>96</volume><issue>4</issue><spage>748</spage><epage>748</epage><pages>748-748</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JPROC.2008.918954</doi><tpages>1</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0018-9219
ispartof Proceedings of the IEEE, 2008-04, Vol.96 (4), p.748-748
issn 0018-9219
1558-2256
language eng
recordid cdi_ieee_primary_4457923
source IEEE Electronic Library (IEL)
subjects Bandwidth
Conductivity
Dielectrics
Frequency
Heterojunction bipolar transistors
Indium gallium arsenide
Paper technology
Pulp manufacturing
Semiconductor device doping
Semiconductor device manufacture
title Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T04%3A42%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Correction%20to%20%22InP%20Bipolar%20ICs:%20Scaling%20Roadmaps,%20Frequency%20Limits,%20Manufacturable%20Technologies%22%20%5BFeb%2008%20271-286%5D&rft.jtitle=Proceedings%20of%20the%20IEEE&rft.au=Rodwell,%20Mark%20J.%20W.&rft.date=2008-04&rft.volume=96&rft.issue=4&rft.spage=748&rft.epage=748&rft.pages=748-748&rft.issn=0018-9219&rft.eissn=1558-2256&rft.coden=IEEPAD&rft_id=info:doi/10.1109/JPROC.2008.918954&rft_dat=%3Cproquest_RIE%3E903616720%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=862828794&rft_id=info:pmid/&rft_ieee_id=4457923&rfr_iscdi=true