Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]
In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.
Gespeichert in:
Veröffentlicht in: | Proceedings of the IEEE 2008-04, Vol.96 (4), p.748-748 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 748 |
---|---|
container_issue | 4 |
container_start_page | 748 |
container_title | Proceedings of the IEEE |
container_volume | 96 |
creator | Rodwell, Mark J. W. Le, Minh Brar, Berinder |
description | In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here. |
doi_str_mv | 10.1109/JPROC.2008.918954 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_4457923</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4457923</ieee_id><sourcerecordid>903616720</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2660-fe192c5509d77a2820597ccd1786d8585c040e39c99a679d193b031e5eb0f6c13</originalsourceid><addsrcrecordid>eNp9kU1v1DAQhi0EEkvhByAu1h7gQrZjO_7iBhELWy1qVcoJIcvrTEqqbLy1k0P_PS5b9cCB00ij5x3NzEPIawYrxsCenl1cnjcrDmBWlhkr6ydkwaQ0FedSPSULAGYqy5l9Tl7kfAMAQiqxILdNTAnD1MeRTpEuN-MF_dQf4uAT3TT5A_0e_NCP1_Qy-nbvD_k9XSe8nXEMd3Tb7_updL75ce58mObkdwPSKwy_xzjE6x7zkv5c446CoVyzihv16yV51vkh46uHekJ-rD9fNV-r7fmXTfNxWwWuFFQdMsuDlGBbrT03HKTVIbRMG9UaaWSAGlDYYK1X2rbMih0IhhJ30KnAxAl5d5x7SLHsmye373PAYfAjxjk7C0IxpTkU8u1_SVHX5cdMFXD5D3gT5zSWK5xRZUWjbV0gdoRCijkn7Nwh9Xuf7hwDd-_K_XXl7l25o6uSeXPM9Ij4yNe11JYL8QfaYYwu</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>862828794</pqid></control><display><type>article</type><title>Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]</title><source>IEEE Electronic Library (IEL)</source><creator>Rodwell, Mark J. W. ; Le, Minh ; Brar, Berinder</creator><creatorcontrib>Rodwell, Mark J. W. ; Le, Minh ; Brar, Berinder</creatorcontrib><description>In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.</description><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/JPROC.2008.918954</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Conductivity ; Dielectrics ; Frequency ; Heterojunction bipolar transistors ; Indium gallium arsenide ; Paper technology ; Pulp manufacturing ; Semiconductor device doping ; Semiconductor device manufacture</subject><ispartof>Proceedings of the IEEE, 2008-04, Vol.96 (4), p.748-748</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2660-fe192c5509d77a2820597ccd1786d8585c040e39c99a679d193b031e5eb0f6c13</citedby><cites>FETCH-LOGICAL-c2660-fe192c5509d77a2820597ccd1786d8585c040e39c99a679d193b031e5eb0f6c13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4457923$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4457923$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Rodwell, Mark J. W.</creatorcontrib><creatorcontrib>Le, Minh</creatorcontrib><creatorcontrib>Brar, Berinder</creatorcontrib><title>Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.</description><subject>Bandwidth</subject><subject>Conductivity</subject><subject>Dielectrics</subject><subject>Frequency</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium gallium arsenide</subject><subject>Paper technology</subject><subject>Pulp manufacturing</subject><subject>Semiconductor device doping</subject><subject>Semiconductor device manufacture</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1v1DAQhi0EEkvhByAu1h7gQrZjO_7iBhELWy1qVcoJIcvrTEqqbLy1k0P_PS5b9cCB00ij5x3NzEPIawYrxsCenl1cnjcrDmBWlhkr6ydkwaQ0FedSPSULAGYqy5l9Tl7kfAMAQiqxILdNTAnD1MeRTpEuN-MF_dQf4uAT3TT5A_0e_NCP1_Qy-nbvD_k9XSe8nXEMd3Tb7_updL75ce58mObkdwPSKwy_xzjE6x7zkv5c446CoVyzihv16yV51vkh46uHekJ-rD9fNV-r7fmXTfNxWwWuFFQdMsuDlGBbrT03HKTVIbRMG9UaaWSAGlDYYK1X2rbMih0IhhJ30KnAxAl5d5x7SLHsmye373PAYfAjxjk7C0IxpTkU8u1_SVHX5cdMFXD5D3gT5zSWK5xRZUWjbV0gdoRCijkn7Nwh9Xuf7hwDd-_K_XXl7l25o6uSeXPM9Ij4yNe11JYL8QfaYYwu</recordid><startdate>200804</startdate><enddate>200804</enddate><creator>Rodwell, Mark J. W.</creator><creator>Le, Minh</creator><creator>Brar, Berinder</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>200804</creationdate><title>Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]</title><author>Rodwell, Mark J. W. ; Le, Minh ; Brar, Berinder</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2660-fe192c5509d77a2820597ccd1786d8585c040e39c99a679d193b031e5eb0f6c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Bandwidth</topic><topic>Conductivity</topic><topic>Dielectrics</topic><topic>Frequency</topic><topic>Heterojunction bipolar transistors</topic><topic>Indium gallium arsenide</topic><topic>Paper technology</topic><topic>Pulp manufacturing</topic><topic>Semiconductor device doping</topic><topic>Semiconductor device manufacture</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rodwell, Mark J. W.</creatorcontrib><creatorcontrib>Le, Minh</creatorcontrib><creatorcontrib>Brar, Berinder</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rodwell, Mark J. W.</au><au>Le, Minh</au><au>Brar, Berinder</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>2008-04</date><risdate>2008</risdate><volume>96</volume><issue>4</issue><spage>748</spage><epage>748</epage><pages>748-748</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JPROC.2008.918954</doi><tpages>1</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 0018-9219 |
ispartof | Proceedings of the IEEE, 2008-04, Vol.96 (4), p.748-748 |
issn | 0018-9219 1558-2256 |
language | eng |
recordid | cdi_ieee_primary_4457923 |
source | IEEE Electronic Library (IEL) |
subjects | Bandwidth Conductivity Dielectrics Frequency Heterojunction bipolar transistors Indium gallium arsenide Paper technology Pulp manufacturing Semiconductor device doping Semiconductor device manufacture |
title | Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286] |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T04%3A42%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Correction%20to%20%22InP%20Bipolar%20ICs:%20Scaling%20Roadmaps,%20Frequency%20Limits,%20Manufacturable%20Technologies%22%20%5BFeb%2008%20271-286%5D&rft.jtitle=Proceedings%20of%20the%20IEEE&rft.au=Rodwell,%20Mark%20J.%20W.&rft.date=2008-04&rft.volume=96&rft.issue=4&rft.spage=748&rft.epage=748&rft.pages=748-748&rft.issn=0018-9219&rft.eissn=1558-2256&rft.coden=IEEPAD&rft_id=info:doi/10.1109/JPROC.2008.918954&rft_dat=%3Cproquest_RIE%3E903616720%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=862828794&rft_id=info:pmid/&rft_ieee_id=4457923&rfr_iscdi=true |