Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]

Correction to "InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies" [Feb 08 271-286]

In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.

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Bibliographische Detailangaben
Veröffentlicht in:Proceedings of the IEEE 2008-04, Vol.96 (4), p.748-748
Hauptverfasser: Rodwell, Mark J. W., Le, Minh, Brar, Berinder
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Conductivity
Dielectrics
Frequency
Heterojunction bipolar transistors
Indium gallium arsenide
Paper technology
Pulp manufacturing
Semiconductor device doping
Semiconductor device manufacture
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Beschreibung
Zusammenfassung:In the above titled paper (ibid., vol. 96, no. 2, pp. 271-286, Feb 08), there are errors. Corrections are presented here.
ISSN:0018-9219
1558-2256
DOI:10.1109/JPROC.2008.918954