Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications

Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications

Implementing wide bandgap GaN HEMT device into broadband distributed power amplifier creates a tremendous opportunity for RF designers to develop high power high efficiency very broadband power amplifiers for military applications. Several prototypes of 10-40 W GaN based distributed power amplifiers...

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Bibliographische Detailangaben
Hauptverfasser: Xie, Chenggang, Pavio, Anthony
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Broadband amplifiers
Distributed amplifiers
Gallium nitride
HEMTs
High power amplifiers
Photonic band gap
Power amplifiers
Prototypes
Radio frequency
Radiofrequency amplifiers
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Beschreibung
Zusammenfassung:Implementing wide bandgap GaN HEMT device into broadband distributed power amplifier creates a tremendous opportunity for RF designers to develop high power high efficiency very broadband power amplifiers for military applications. Several prototypes of 10-40 W GaN based distributed power amplifiers, including MMIC distributed PA, are currently under the development at Rockwell Collins, Inc. In this paper, we will discuss the results of a 10 W distributed power amplifier with the maximum power output of more than 40 dBm and a power-added efficiency of 30-70% over the bandwidth of 20-2000 MHz.
ISSN:2155-7578
2155-7586
DOI:10.1109/MILCOM.2007.4455083