VTH -Extractors Based Readout Circuit of ISFET with Temperature Compensation

VTH -Extractors Based Readout Circuit of ISFET with Temperature Compensation

-This paper proposes a novel readout circuit of ion sensitive field effect transistor (ISFET) with temperature compensation using two threshold voltage (V TH ) extractor circuits. The first V TH extractor with ISFET gives the pH reading and the second V TH extractor with depletion-type MOSFET (DMOSF...

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Hauptverfasser: Liu, Tai-Tsun, Chung, Wen-Yaw, Cruz, Febus Reidj G., Tsai, You-Lin, Pijanowska, Dorota G., Torbicz, Wladyslaw, Grabiec, Piotr B., Jaroszewicz, Bohdan
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Biomedical monitoring
Biomembranes
Energy consumption
FET integrated circuits
Industrial electronics
ISFET
MOSFET circuits
Operational amplifiers
Tellurium
Temperature compensation
Temperature sensors
Threshold voltage
V TH extractor
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Beschreibung
Zusammenfassung:-This paper proposes a novel readout circuit of ion sensitive field effect transistor (ISFET) with temperature compensation using two threshold voltage (V TH ) extractor circuits. The first V TH extractor with ISFET gives the pH reading and the second V TH extractor with depletion-type MOSFET (DMOSFET) provides the temperature compensation. The entire circuit uses only 20 transistors and dissipates a power of 889.3 muW. This design offers a sensitivity of 54 mV/pH and an improved temperature coefficient (T.C.) of 0.02 mV/degC.
DOI:10.1109/EDSSC.2007.4450271