Impact of Source/Drain Tie on a 30 nm Bottom Gate MOSFETs

Impact of Source/Drain Tie on a 30 nm Bottom Gate MOSFETs

This paper presents a non-classical architecture called the bottom gate MOSFET with source/drain tie (S/D-tied BG) to achieve enhanced device reliability. According to the 2-D numerical simulation, the proposed structure can effectively reduce the effects of self-heating because of its source/drain-...

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Hauptverfasser: Lin, Jyi-Tsong, Lin, Jeng-Da, Shiang-Shi, Kang, Huang, Hau-Yuan, Kao, Kung-Kai, Eng, Yi-Chuen
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Dry etching
Electron beams
Immune system
Lithography
MOSFETs
Numerical simulation
Planarization
Silicon
Thermal stability
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Beschreibung
Zusammenfassung:This paper presents a non-classical architecture called the bottom gate MOSFET with source/drain tie (S/D-tied BG) to achieve enhanced device reliability. According to the 2-D numerical simulation, the proposed structure can effectively reduce the effects of self-heating because of its source/drain-tied scheme, resulting in improved thermal stability. In addition, S/D-tied BG MOSFET not only diminishes short-channel effects but also decreases source/drain series resistance, which is the major advantage over the conventional ultra-thin SOI.
DOI:10.1109/EDSSC.2007.4450192