X-Band Receiver Front-End Chip in Silicon Germanium Technology

This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) out...

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Hauptverfasser:	Quach, T.K., Bryant, C.A., Creech, G.L., Groves, K.S., James, T.L., Mattamana, A.G., Orlando, P.L., Patel, V.J., Drangmeister, R.G., Johnson, L.M., Kormanyos, B.K., Bonebright, R.K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Frequency conversion Germanium silicon alloys Integrated circuit noise Integrated circuit technology Low-noise amplifiers Microwave amplifiers MMICs Monolithic integrated circuits Radio frequency Silicon germanium
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Beschreibung
Zusammenfassung:	This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) output. The microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier, lead-lag splitter, balanced amplifiers, double balanced mixer, absorptive filter, and an IF amplifier. The integrated chip achieved greater than 30 dB of gain and less than 6 dB of noise figure.
DOI:	10.1109/SMIC.2008.11