Backside E-Beam Probing on Nano scale devices

Backside E-Beam Probing on Nano scale devices

IC debug with E-beam probing is presented in an innovative application accessing the active device directly from chip backside after FIB preparation. The potential of this approach in nanoscale and gigahertz dimensions is evaluated.

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Bibliographische Detailangaben
Hauptverfasser: Schlangen, R., Leihkauf, R., Kerst, U., Boit, C., Jain, R., Malik, T., Wilsher, K., Lundquist, T., Kruger, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Application specific integrated circuits
Floors
Integrated circuit measurements
Optical control
Semiconductor device measurement
Signal generators
Silicon
Stimulated emission
Timing
Voltage measurement
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Beschreibung
Zusammenfassung:IC debug with E-beam probing is presented in an innovative application accessing the active device directly from chip backside after FIB preparation. The potential of this approach in nanoscale and gigahertz dimensions is evaluated.
ISSN:1089-3539
2378-2250
DOI:10.1109/TEST.2007.4437627