Exploration of GaTe for gamma detection
The layered III-VI semiconductor Gallium Telluride has potential for room temperature gamma ray spectroscopy applications due to its band gap of 1.67 eV, and average atomic number of 45 : 31 (Ga) and 52 (Te). The physical properties of GaTe are highly anisotropic due to covalent bonding within the l...
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| creator | Conway, A.M. Reinhardt, C.E. Nikolic, R.J. Nelson, A.J. Wang, T.F. Wu, K.J. Payne, S.A. Mertiri, A. Pabst, G. Roy, R. Mandal, K.C. Bhattacharya, P. Yunlong Cui Groza, M. Burger, A. |
| description | The layered III-VI semiconductor Gallium Telluride has potential for room temperature gamma ray spectroscopy applications due to its band gap of 1.67 eV, and average atomic number of 45 : 31 (Ga) and 52 (Te). The physical properties of GaTe are highly anisotropic due to covalent bonding within the layer and van der Waals bonding between layers. This work reports the results of surface and bulk processing, surface characterization, and electrical characterization of diodes formed on both the laminar and non-laminar GaTe surfaces. Alpha detection measurements were also performed. |
| doi_str_mv | 10.1109/NSSMIC.2007.4437294 |
| format | Conference Proceeding |
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The physical properties of GaTe are highly anisotropic due to covalent bonding within the layer and van der Waals bonding between layers. This work reports the results of surface and bulk processing, surface characterization, and electrical characterization of diodes formed on both the laminar and non-laminar GaTe surfaces. Alpha detection measurements were also performed.</description><identifier>ISSN: 1082-3654</identifier><identifier>ISBN: 1424409225</identifier><identifier>ISBN: 9781424409228</identifier><identifier>EISSN: 2577-0829</identifier><identifier>EISBN: 1424409233</identifier><identifier>EISBN: 9781424409235</identifier><identifier>DOI: 10.1109/NSSMIC.2007.4437294</identifier><language>eng</language><publisher>IEEE</publisher><subject>Atomic layer deposition ; Bonding ; Gallium ; Gamma ray detection ; Gamma ray detectors ; III-V semiconductor materials ; Photonic band gap ; Spectroscopy ; Tellurium ; Temperature</subject><ispartof>2007 IEEE Nuclear Science Symposium Conference Record, 2007, Vol.2, p.1551-1555</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4437294$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4437294$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Conway, A.M.</creatorcontrib><creatorcontrib>Reinhardt, C.E.</creatorcontrib><creatorcontrib>Nikolic, R.J.</creatorcontrib><creatorcontrib>Nelson, A.J.</creatorcontrib><creatorcontrib>Wang, T.F.</creatorcontrib><creatorcontrib>Wu, K.J.</creatorcontrib><creatorcontrib>Payne, S.A.</creatorcontrib><creatorcontrib>Mertiri, A.</creatorcontrib><creatorcontrib>Pabst, G.</creatorcontrib><creatorcontrib>Roy, R.</creatorcontrib><creatorcontrib>Mandal, K.C.</creatorcontrib><creatorcontrib>Bhattacharya, P.</creatorcontrib><creatorcontrib>Yunlong Cui</creatorcontrib><creatorcontrib>Groza, M.</creatorcontrib><creatorcontrib>Burger, A.</creatorcontrib><title>Exploration of GaTe for gamma detection</title><title>2007 IEEE Nuclear Science Symposium Conference Record</title><addtitle>NSSMIC</addtitle><description>The layered III-VI semiconductor Gallium Telluride has potential for room temperature gamma ray spectroscopy applications due to its band gap of 1.67 eV, and average atomic number of 45 : 31 (Ga) and 52 (Te). The physical properties of GaTe are highly anisotropic due to covalent bonding within the layer and van der Waals bonding between layers. This work reports the results of surface and bulk processing, surface characterization, and electrical characterization of diodes formed on both the laminar and non-laminar GaTe surfaces. Alpha detection measurements were also performed.</description><subject>Atomic layer deposition</subject><subject>Bonding</subject><subject>Gallium</subject><subject>Gamma ray detection</subject><subject>Gamma ray detectors</subject><subject>III-V semiconductor materials</subject><subject>Photonic band gap</subject><subject>Spectroscopy</subject><subject>Tellurium</subject><subject>Temperature</subject><issn>1082-3654</issn><issn>2577-0829</issn><isbn>1424409225</isbn><isbn>9781424409228</isbn><isbn>1424409233</isbn><isbn>9781424409235</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFj01Lw0AURccvMK3-gm6yc5V05r03eZmlhFoLrS5a12UyeZFIY0qShf57KxZcXbjncOEqNTM6NUa7-ct2u1kVKWjNKREyOLpQE0NApB0gXqoILHOic3BX_wDstYrMqUwws3SrJsPwoTVoJIrUw-LreOh6PzbdZ9zV8dLvJK67Pn73bevjSkYJv-xO3dT-MMj9Oafq7WmxK56T9etyVTyuk8awHZPMh5JQNFGJFbOHEDgzEvIyY8gpYxHjUbscAhp7sgErJxZqZjQIFU7V7G-3EZH9sW9a33_vz2_xB44YQ0c</recordid><startdate>200710</startdate><enddate>200710</enddate><creator>Conway, A.M.</creator><creator>Reinhardt, C.E.</creator><creator>Nikolic, R.J.</creator><creator>Nelson, A.J.</creator><creator>Wang, T.F.</creator><creator>Wu, K.J.</creator><creator>Payne, S.A.</creator><creator>Mertiri, A.</creator><creator>Pabst, G.</creator><creator>Roy, R.</creator><creator>Mandal, K.C.</creator><creator>Bhattacharya, P.</creator><creator>Yunlong Cui</creator><creator>Groza, M.</creator><creator>Burger, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200710</creationdate><title>Exploration of GaTe for gamma detection</title><author>Conway, A.M. ; Reinhardt, C.E. ; Nikolic, R.J. ; Nelson, A.J. ; Wang, T.F. ; Wu, K.J. ; Payne, S.A. ; Mertiri, A. ; Pabst, G. ; Roy, R. ; Mandal, K.C. ; Bhattacharya, P. ; Yunlong Cui ; Groza, M. ; Burger, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-6acb43e044b3d77a2cc761ec8b6728467ee1a30982c3156ac23d9e52f773132d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Atomic layer deposition</topic><topic>Bonding</topic><topic>Gallium</topic><topic>Gamma ray detection</topic><topic>Gamma ray detectors</topic><topic>III-V semiconductor materials</topic><topic>Photonic band gap</topic><topic>Spectroscopy</topic><topic>Tellurium</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Conway, A.M.</creatorcontrib><creatorcontrib>Reinhardt, C.E.</creatorcontrib><creatorcontrib>Nikolic, R.J.</creatorcontrib><creatorcontrib>Nelson, A.J.</creatorcontrib><creatorcontrib>Wang, T.F.</creatorcontrib><creatorcontrib>Wu, K.J.</creatorcontrib><creatorcontrib>Payne, S.A.</creatorcontrib><creatorcontrib>Mertiri, A.</creatorcontrib><creatorcontrib>Pabst, G.</creatorcontrib><creatorcontrib>Roy, R.</creatorcontrib><creatorcontrib>Mandal, K.C.</creatorcontrib><creatorcontrib>Bhattacharya, P.</creatorcontrib><creatorcontrib>Yunlong Cui</creatorcontrib><creatorcontrib>Groza, M.</creatorcontrib><creatorcontrib>Burger, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Conway, A.M.</au><au>Reinhardt, C.E.</au><au>Nikolic, R.J.</au><au>Nelson, A.J.</au><au>Wang, T.F.</au><au>Wu, K.J.</au><au>Payne, S.A.</au><au>Mertiri, A.</au><au>Pabst, G.</au><au>Roy, R.</au><au>Mandal, K.C.</au><au>Bhattacharya, P.</au><au>Yunlong Cui</au><au>Groza, M.</au><au>Burger, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Exploration of GaTe for gamma detection</atitle><btitle>2007 IEEE Nuclear Science Symposium Conference Record</btitle><stitle>NSSMIC</stitle><date>2007-10</date><risdate>2007</risdate><volume>2</volume><spage>1551</spage><epage>1555</epage><pages>1551-1555</pages><issn>1082-3654</issn><eissn>2577-0829</eissn><isbn>1424409225</isbn><isbn>9781424409228</isbn><eisbn>1424409233</eisbn><eisbn>9781424409235</eisbn><abstract>The layered III-VI semiconductor Gallium Telluride has potential for room temperature gamma ray spectroscopy applications due to its band gap of 1.67 eV, and average atomic number of 45 : 31 (Ga) and 52 (Te). The physical properties of GaTe are highly anisotropic due to covalent bonding within the layer and van der Waals bonding between layers. This work reports the results of surface and bulk processing, surface characterization, and electrical characterization of diodes formed on both the laminar and non-laminar GaTe surfaces. Alpha detection measurements were also performed.</abstract><pub>IEEE</pub><doi>10.1109/NSSMIC.2007.4437294</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 1082-3654 |
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| issn | 1082-3654 2577-0829 |
| language | eng |
| recordid | cdi_ieee_primary_4437294 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atomic layer deposition Bonding Gallium Gamma ray detection Gamma ray detectors III-V semiconductor materials Photonic band gap Spectroscopy Tellurium Temperature |
| title | Exploration of GaTe for gamma detection |
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