Exploration of GaTe for gamma detection

The layered III-VI semiconductor Gallium Telluride has potential for room temperature gamma ray spectroscopy applications due to its band gap of 1.67 eV, and average atomic number of 45 : 31 (Ga) and 52 (Te). The physical properties of GaTe are highly anisotropic due to covalent bonding within the l...

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Hauptverfasser:	Conway, A.M., Reinhardt, C.E., Nikolic, R.J., Nelson, A.J., Wang, T.F., Wu, K.J., Payne, S.A., Mertiri, A., Pabst, G., Roy, R., Mandal, K.C., Bhattacharya, P., Yunlong Cui, Groza, M., Burger, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic layer deposition Bonding Gallium Gamma ray detection Gamma ray detectors III-V semiconductor materials Photonic band gap Spectroscopy Tellurium Temperature
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Beschreibung
Zusammenfassung:	The layered III-VI semiconductor Gallium Telluride has potential for room temperature gamma ray spectroscopy applications due to its band gap of 1.67 eV, and average atomic number of 45 : 31 (Ga) and 52 (Te). The physical properties of GaTe are highly anisotropic due to covalent bonding within the layer and van der Waals bonding between layers. This work reports the results of surface and bulk processing, surface characterization, and electrical characterization of diodes formed on both the laminar and non-laminar GaTe surfaces. Alpha detection measurements were also performed.
ISSN:	1082-3654 2577-0829
DOI:	10.1109/NSSMIC.2007.4437294