Anodic Ta2O5 for CMOS compatible low voltage electrowetting-on-dielectric device fabrication

This paper reports a CMOS compatible fabrication procedure that enables ElecroWetting On Dielectric (EWOD) technology to be post-processed on foundry technology. With driving voltages less than 15 V it is believed to be the lowest reported driving voltage for any material system compatible with post...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Li, Y., Parkes, W., Haworth, L.I., Stokes, A.A., Muir, K.R., Li, P., Collin, A.J., Hutcheon, N.G., Henderson, R., Rae, B., Walton, A.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance CMOS technology Dielectric materials Dielectrics and electrical insulation Fabrication Foundries High-K gate dielectrics Integrated circuit technology Low voltage Robustness
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