On-wafer level packaging of RF MEMS devices for Ka-band applications

In this paper, on-wafer level packaging technology for RF MEMS is described, and then a novel packaging design for RF MEMS devices with different fabrication technology at millimeter-wave band is presented. The discussed RF MEMS devices on naked wafer includes a MEMS filter and a distributed MEMS tr...

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Hauptverfasser: Qun Wu, Bo-Shi Jin, Xun-Jun He, Kai Tang, Fang Zhang, Jong-Chul Lee
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Bo-Shi Jin
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Kai Tang
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Jong-Chul Lee
description In this paper, on-wafer level packaging technology for RF MEMS is described, and then a novel packaging design for RF MEMS devices with different fabrication technology at millimeter-wave band is presented. The discussed RF MEMS devices on naked wafer includes a MEMS filter and a distributed MEMS transmission line (DMTL) phase shifter, which are fabricated using LIGA and micromachined technology, respectively. In order to realize the integration of those devices into a system at millimeter wave band, the packaged devices are embedded in a substrate. After incorporating the parasitic parameters into the equivalent circuit for the phase shifter, it is found that the bandwidth of predicted packaging increases about 8 GHz, moreover, the predicted packaging area is only about 40% larger than the naked device.
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects distributed MEMS transmission line (DMTL)
Distributed parameter circuits
Fabrication
filter
Filters
Micromechanical devices
Millimeter wave circuits
Millimeter wave devices
Millimeter wave technology
on-wafer packaging
Packaging
phase shifter
Phase shifters
phased array antenna
Radiofrequency microelectromechanical systems
RF MEMS
title On-wafer level packaging of RF MEMS devices for Ka-band applications
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