On-wafer level packaging of RF MEMS devices for Ka-band applications

In this paper, on-wafer level packaging technology for RF MEMS is described, and then a novel packaging design for RF MEMS devices with different fabrication technology at millimeter-wave band is presented. The discussed RF MEMS devices on naked wafer includes a MEMS filter and a distributed MEMS tr...

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Hauptverfasser: Qun Wu, Bo-Shi Jin, Xun-Jun He, Kai Tang, Fang Zhang, Jong-Chul Lee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:In this paper, on-wafer level packaging technology for RF MEMS is described, and then a novel packaging design for RF MEMS devices with different fabrication technology at millimeter-wave band is presented. The discussed RF MEMS devices on naked wafer includes a MEMS filter and a distributed MEMS transmission line (DMTL) phase shifter, which are fabricated using LIGA and micromachined technology, respectively. In order to realize the integration of those devices into a system at millimeter wave band, the packaged devices are embedded in a substrate. After incorporating the parasitic parameters into the equivalent circuit for the phase shifter, it is found that the bandwidth of predicted packaging increases about 8 GHz, moreover, the predicted packaging area is only about 40% larger than the naked device.
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2006.4429446