Implementation and study of photovoltaic cells based on InP lattice-matched InGaAs and InGaAsP

Implementation and study of photovoltaic cells based on InP lattice-matched InGaAs and InGaAsP

In a recent paper, we have shown that optimum device performance can be achieved by using relatively thin structures and moderate doping concentrations in InGaAs(P) photovoltaic (PV) cells. We report in this paper the implementation and assessment of single-junction InGaAs and InGaAsP PV cells latti...

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Bibliographische Detailangaben
Hauptverfasser: Emziane, M., Tuley, R., Nicholas, R.J., Rogers, D.C., Cannard, P.J., Dosanjh, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current density
Doping
Educational institutions
Indium gallium arsenide
Indium phosphide
Laboratories
Lighting
Photonic band gap
Photovoltaic cells
Voltage
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Beschreibung
Zusammenfassung:In a recent paper, we have shown that optimum device performance can be achieved by using relatively thin structures and moderate doping concentrations in InGaAs(P) photovoltaic (PV) cells. We report in this paper the implementation and assessment of single-junction InGaAs and InGaAsP PV cells lattice-matched to InP. Three bandgaps (0.74, 1.0 and 1.2 eV) and both n/p and p/n structure configurations have been studied.
DOI:10.1109/ISDRS.2007.4422526