Effect of P-type cladding layer and P++-GaN layer of InGaN/GaN MQWs blue LED

In this work, we modified the p-type epitaxy structure to improve the p-type metal-semiconductor ohmic contact. Further, we investigated the electrical and optical properties by adjusting the p-type cladding layer structure in the InGaN/GaN MQW samples.

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Bibliographische Detailangaben
Hauptverfasser:	Chun-Wei Liao, Yung-Hsiang Lin, Cheng-Ying Yen, Pei-Wen Liu, Yuan-Chieh Lu, Ray-Ming Lin
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Carrier confinement Charge carrier processes Gallium nitride Laser sintering Light emitting diodes Ohmic contacts Optical devices Optical superlattices Quantum well devices Voltage
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Beschreibung
Zusammenfassung:	In this work, we modified the p-type epitaxy structure to improve the p-type metal-semiconductor ohmic contact. Further, we investigated the electrical and optical properties by adjusting the p-type cladding layer structure in the InGaN/GaN MQW samples.
DOI:	10.1109/ISDRS.2007.4422389