Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment

Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment

The reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by the fluorine plasma treatment technique was investigated by applying OFF-state and ON- state long-term high-electric-field stress. A moderate negative shift (-0.25 V) was observed in the threshold voltage after 288 hours of stress. Th...

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Bibliographische Detailangaben
Hauptverfasser: Congwen Yi, Ruonan Wang, Wei Huang, Tang, W.C.-W., Lau, K.M., Chen, K.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Gallium nitride
HEMTs
MODFETs
Plasma devices
Plasma sources
Plasma stability
Plasma temperature
Thermal stresses
Threshold voltage
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Zusammenfassung:The reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by the fluorine plasma treatment technique was investigated by applying OFF-state and ON- state long-term high-electric-field stress. A moderate negative shift (-0.25 V) was observed in the threshold voltage after 288 hours of stress. This shift, however, can be eliminated with an enhancement/depletion dual-gate configuration which effectively prevents high electric field from influencing the fluorine plasma treated area.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2007.4418954