Raman enhancement of TO-520cm−1 mode of Si by off-plane one- dimensional grating etched on Si substrate

Raman enhancement of TO-520cm−1 mode of Si by off-plane one- dimensional grating etched on Si substrate

We have observed the relationship between the intensity of Raman scattering of TO-520 cm -1 mode of Si and variations of the geometrical structure of Si gratings as well as the polarizations of incident waves.

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Bibliographische Detailangaben
Hauptverfasser: Chou, Ling-Chung, Kuan, C.-H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diffraction gratings
Etching
Geometrical optics
Optical detectors
Optical polarization
Optical scattering
Optical surface waves
Photonic crystals
Raman scattering
Surface waves
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Beschreibung
Zusammenfassung:We have observed the relationship between the intensity of Raman scattering of TO-520 cm -1 mode of Si and variations of the geometrical structure of Si gratings as well as the polarizations of incident waves.
ISSN:2162-108X
2162-1098
DOI:10.1109/AOE.2007.4410897