The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of \hbox MOSFET Devices

To understand the influence of oxygen vacancies in on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO 2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical c...

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Veröffentlicht in:	IEEE electron device letters 2008-01, Vol.29 (1), p.54-56
Hauptverfasser:	Hokyung Park, Minseok Jo, Hyejung Choi, Hasan, M., Rino Choi, Kirsch, P.D., Chang Young Kang, Byoung Hun Lee, Tae-Wook Kim, Takhee Lee, Hyunsang Hwang
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Atomic force microscopy Atomic measurements Capacitors Charge trapping CMOS process conducting atomic force microscopy (C-AFM) Dielectrics Hafnium oxide MOSFET circuits Oxygen oxygen vacancy Pollution measurement
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