The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of \hbox MOSFET Devices

The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of \hbox MOSFET Devices

To understand the influence of oxygen vacancies in on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO 2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical c...

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Veröffentlicht in:IEEE electron device letters 2008-01, Vol.29 (1), p.54-56
Hauptverfasser: Hokyung Park, Minseok Jo, Hyejung Choi, Hasan, M., Rino Choi, Kirsch, P.D., Chang Young Kang, Byoung Hun Lee, Tae-Wook Kim, Takhee Lee, Hyunsang Hwang
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Atomic force microscopy
Atomic measurements
Capacitors
Charge trapping
CMOS process
conducting atomic force microscopy (C-AFM)
Dielectrics
Hafnium oxide
MOSFET circuits
Oxygen
oxygen vacancy
Pollution measurement
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Zusammenfassung:To understand the influence of oxygen vacancies in on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO 2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various postdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO 2 . With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO 2 nMOSFET.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.911992