A 180 Kbit Embeddable MRAM Memory Module

A 180 Kbit Embeddable MRAM Memory Module

180 Kbit magnetoresistive random access memory (MRAM) designed for embedding in a 0.28 micron CMOS process has been developed. The memory cell is based on a 1-transistor 1-magnetic tunnel junction (1T1MTJ) bit cell. The architecture, write driver, and sense amplifier are described. The use of a test...

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Bibliographische Detailangaben
Hauptverfasser: Nahas, J.J., Andre, T., Subramanian, C., Lin, H., Alam, S.M., Papworth, K., Martino, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS process
Couplings
Driver circuits
Magnetic circuits
Magnetic separation
Magnetic tunneling
Magnetoresistance
Nonvolatile memory
Random access memory
Testing
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Beschreibung
Zusammenfassung:180 Kbit magnetoresistive random access memory (MRAM) designed for embedding in a 0.28 micron CMOS process has been developed. The memory cell is based on a 1-transistor 1-magnetic tunnel junction (1T1MTJ) bit cell. The architecture, write driver, and sense amplifier are described. The use of a test register to characterize and optimize the memory design is also discussed.
ISSN:0886-5930
2152-3630
DOI:10.1109/CICC.2007.4405848