A MEM varactor tuned-voltage controlled oscillator fabricated using 0.35μm SiGe BiCMOS technology

In this paper, design and realization of a parallel plate dual gap MEM-Varactor based -G m LC voltage controlled oscillator (VCO) is presented. The VCO is implemented with AMS 0.35 mum-SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). MEM- Varactor is fabricated in Sabanci University's cleanroom and includes six layers and five mask steps. MEM-Varactor and VCO is integrated on a FR4 substrate using wire bonder. With the actuation voltage of 0 to 10V, 70 MHz tuning range is measured from MEM-Varactor integrated VCO that is in the range 7.72 GHz to 7.80 GHz. Fundamental frequency output power changes between -2 dBm and 0 dBm, without the losses depending on the tuning voltage.