Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth

Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH 3 was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applie...

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Bibliographische Detailangaben

Hauptverfasser:	Seung-Kju Choi, Jae-Min Jang, Sung-Hak Yi, Jung-A Kim, Woo-Gwang Jung
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atom optics Chemical vapor deposition Gallium nitride Light emitting diodes MOCVD Nanoscale devices Nitrogen Optical materials Quantum dots Temperature
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