Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth
Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH 3 was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applie...
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| Zusammenfassung: | Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH 3 was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applied to optical materials systems. |
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| DOI: | 10.1109/CLEOPR.2007.4391809 |