Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth
Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH 3 was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applie...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2 |
|---|---|
| container_issue | |
| container_start_page | 1 |
| container_title | |
| container_volume | |
| creator | Seung-Kju Choi Jae-Min Jang Sung-Hak Yi Jung-A Kim Woo-Gwang Jung |
| description | Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH 3 was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applied to optical materials systems. |
| doi_str_mv | 10.1109/CLEOPR.2007.4391809 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4391809</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4391809</ieee_id><sourcerecordid>4391809</sourcerecordid><originalsourceid>FETCH-LOGICAL-i160t-594ab8395b8f98933967ee3ed452e889a592e3ed02bc08ba71f08b04b8ff29b43</originalsourceid><addsrcrecordid>eNo1kE1uwjAUhF1VSC2UE7DxBUL9F2IvK8SfhKCq2jWykxdwlcSpbYq4QM_dQOnbjEbv00gzCI0oGVNK1PN0Pdu-vo0ZIdlYcEUlUXdoqDJJBROC0kyQe9T_N1z0UP_CKsa5Sh_QMIRP0p1IBSPyEf3Mna91tK7BrsSrZqE3OEBVJjoEqE0FBf466iYea1y4GHDHXRBzxjVEXSXO73Vjc5wfoLa5rvC3bp3HBbQu2GvsycYD3iw5bsFbV3SsbSJ4f2yv7713p3h4Qr1SVwGGNx2gj_nsfbpM1tvFavqyTiydkJikSmgjuyJGlkqqrtIkA-BQiJSBlEqnil0sYSYn0uiMlp0Q0eElU0bwARr95VoA2LXe1tqfd7cd-S-whWbP</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Seung-Kju Choi ; Jae-Min Jang ; Sung-Hak Yi ; Jung-A Kim ; Woo-Gwang Jung</creator><creatorcontrib>Seung-Kju Choi ; Jae-Min Jang ; Sung-Hak Yi ; Jung-A Kim ; Woo-Gwang Jung</creatorcontrib><description>Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH 3 was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applied to optical materials systems.</description><identifier>ISBN: 1424411734</identifier><identifier>ISBN: 9781424411733</identifier><identifier>EISBN: 9781424411740</identifier><identifier>EISBN: 1424411742</identifier><identifier>DOI: 10.1109/CLEOPR.2007.4391809</identifier><identifier>LCCN: 2007923395</identifier><language>eng</language><publisher>IEEE</publisher><subject>Atom optics ; Chemical vapor deposition ; Gallium nitride ; Light emitting diodes ; MOCVD ; Nanoscale devices ; Nitrogen ; Optical materials ; Quantum dots ; Temperature</subject><ispartof>2007 Conference on Lasers and Electro-Optics - Pacific Rim, 2007, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4391809$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4391809$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Seung-Kju Choi</creatorcontrib><creatorcontrib>Jae-Min Jang</creatorcontrib><creatorcontrib>Sung-Hak Yi</creatorcontrib><creatorcontrib>Jung-A Kim</creatorcontrib><creatorcontrib>Woo-Gwang Jung</creatorcontrib><title>Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth</title><title>2007 Conference on Lasers and Electro-Optics - Pacific Rim</title><addtitle>CLEOPR</addtitle><description>Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH 3 was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applied to optical materials systems.</description><subject>Atom optics</subject><subject>Chemical vapor deposition</subject><subject>Gallium nitride</subject><subject>Light emitting diodes</subject><subject>MOCVD</subject><subject>Nanoscale devices</subject><subject>Nitrogen</subject><subject>Optical materials</subject><subject>Quantum dots</subject><subject>Temperature</subject><isbn>1424411734</isbn><isbn>9781424411733</isbn><isbn>9781424411740</isbn><isbn>1424411742</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kE1uwjAUhF1VSC2UE7DxBUL9F2IvK8SfhKCq2jWykxdwlcSpbYq4QM_dQOnbjEbv00gzCI0oGVNK1PN0Pdu-vo0ZIdlYcEUlUXdoqDJJBROC0kyQe9T_N1z0UP_CKsa5Sh_QMIRP0p1IBSPyEf3Mna91tK7BrsSrZqE3OEBVJjoEqE0FBf466iYea1y4GHDHXRBzxjVEXSXO73Vjc5wfoLa5rvC3bp3HBbQu2GvsycYD3iw5bsFbV3SsbSJ4f2yv7713p3h4Qr1SVwGGNx2gj_nsfbpM1tvFavqyTiydkJikSmgjuyJGlkqqrtIkA-BQiJSBlEqnil0sYSYn0uiMlp0Q0eElU0bwARr95VoA2LXe1tqfd7cd-S-whWbP</recordid><startdate>200708</startdate><enddate>200708</enddate><creator>Seung-Kju Choi</creator><creator>Jae-Min Jang</creator><creator>Sung-Hak Yi</creator><creator>Jung-A Kim</creator><creator>Woo-Gwang Jung</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200708</creationdate><title>Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth</title><author>Seung-Kju Choi ; Jae-Min Jang ; Sung-Hak Yi ; Jung-A Kim ; Woo-Gwang Jung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i160t-594ab8395b8f98933967ee3ed452e889a592e3ed02bc08ba71f08b04b8ff29b43</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Atom optics</topic><topic>Chemical vapor deposition</topic><topic>Gallium nitride</topic><topic>Light emitting diodes</topic><topic>MOCVD</topic><topic>Nanoscale devices</topic><topic>Nitrogen</topic><topic>Optical materials</topic><topic>Quantum dots</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Seung-Kju Choi</creatorcontrib><creatorcontrib>Jae-Min Jang</creatorcontrib><creatorcontrib>Sung-Hak Yi</creatorcontrib><creatorcontrib>Jung-A Kim</creatorcontrib><creatorcontrib>Woo-Gwang Jung</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Seung-Kju Choi</au><au>Jae-Min Jang</au><au>Sung-Hak Yi</au><au>Jung-A Kim</au><au>Woo-Gwang Jung</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth</atitle><btitle>2007 Conference on Lasers and Electro-Optics - Pacific Rim</btitle><stitle>CLEOPR</stitle><date>2007-08</date><risdate>2007</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><isbn>1424411734</isbn><isbn>9781424411733</isbn><eisbn>9781424411740</eisbn><eisbn>1424411742</eisbn><abstract>Self-assembled InGaN QDs on GaN epi-layer were grown by metal-organic chemical vapor deposition. In the growth of InGaN QDs, NH 3 was supplied in cyclic interrupted mode with interval of 3 seconds and 5 seconds. This work enables the fabrication of dense, uniform InGaN QDs, and is potentially applied to optical materials systems.</abstract><pub>IEEE</pub><doi>10.1109/CLEOPR.2007.4391809</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 1424411734 |
| ispartof | 2007 Conference on Lasers and Electro-Optics - Pacific Rim, 2007, p.1-2 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_4391809 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atom optics Chemical vapor deposition Gallium nitride Light emitting diodes MOCVD Nanoscale devices Nitrogen Optical materials Quantum dots Temperature |
| title | Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T11%3A55%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Formation%20of%20InGaN%20self-assembled%20quantum%20dots%20on%20GaN%20by%20metal-organic%20chemical%20vapor%20deposition%20with%20NH3%20periodic%20interruption%20growth&rft.btitle=2007%20Conference%20on%20Lasers%20and%20Electro-Optics%20-%20Pacific%20Rim&rft.au=Seung-Kju%20Choi&rft.date=2007-08&rft.spage=1&rft.epage=2&rft.pages=1-2&rft.isbn=1424411734&rft.isbn_list=9781424411733&rft_id=info:doi/10.1109/CLEOPR.2007.4391809&rft_dat=%3Cieee_6IE%3E4391809%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424411740&rft.eisbn_list=1424411742&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4391809&rfr_iscdi=true |