Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process
Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4×10 12 cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125°C data bake...
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| creator | Rodriguez, J. Remack, K. Gertas, J. Boku, K. Udayakumar, K.R. Summerfelt, S. Shinn, G. Madan, S. McAdams, H. Moise, T. Eliason, J. Bailey, R. Depner, M. Kim, D. Staubs, P. |
| description | Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4×10 12 cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125°C data bake to 1,000 Hrs with no fails. |
| doi_str_mv | 10.1109/NVMT.2007.4389948 |
| format | Conference Proceeding |
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Intrinsic endurance test to 5.4×10 12 cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125°C data bake to 1,000 Hrs with no fails.</abstract><doi>10.1109/NVMT.2007.4389948</doi><tpages>3</tpages></addata></record> |
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| identifier | ISBN: 1424413613 |
| ispartof | 2007 Non-Volatile Memory Technology Symposium, 2007, p.64-66 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS process Ferroelectric films Ferroelectric materials Instruments Nonvolatile memory Packaging Polarization Random access memory Temperature Testing |
| title | Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process |
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