Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4×10 12 cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125°C data bake...

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Hauptverfasser: Rodriguez, J., Remack, K., Gertas, J., Boku, K., Udayakumar, K.R., Summerfelt, S., Shinn, G., Madan, S., McAdams, H., Moise, T., Eliason, J., Bailey, R., Depner, M., Kim, D., Staubs, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS process
Ferroelectric films
Ferroelectric materials
Instruments
Nonvolatile memory
Packaging
Polarization
Random access memory
Temperature
Testing
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Beschreibung
Zusammenfassung:Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4×10 12 cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125°C data bake to 1,000 Hrs with no fails.
DOI:10.1109/NVMT.2007.4389948