Characterization of ZnO nanowire field-effect transistors exposed to high energy proton radiation

ZnO nanowires (NWs) are synthesized by thermal evaporation method. The ZnO nanowire field-effect transistors (FETs) are fabricated and characterized. The fabricated FETs exhibit transconductance of 5.3 nS, mobility of 10.2 cm 2 /V sec, and on/off current ratio of 10 5 . ZnO NW-FET devices exposed to...

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Bibliographische Detailangaben

Hauptverfasser:	Woong-Ki Hong, Ahnsook Yoon, Sunghoon Song, Kwanwoo Shin, Takhee Lee
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Diffraction FETs field effect transistor Gold Materials science and technology Nanoscale devices nanowire Powders proton Protons Scanning electron microscopy Substrates Zinc oxide ZnO
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