Characterization of ZnO nanowire field-effect transistors exposed to high energy proton radiation

Characterization of ZnO nanowire field-effect transistors exposed to high energy proton radiation

ZnO nanowires (NWs) are synthesized by thermal evaporation method. The ZnO nanowire field-effect transistors (FETs) are fabricated and characterized. The fabricated FETs exhibit transconductance of 5.3 nS, mobility of 10.2 cm 2 /V sec, and on/off current ratio of 10 5 . ZnO NW-FET devices exposed to...

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Bibliographische Detailangaben
Hauptverfasser: Woong-Ki Hong, Ahnsook Yoon, Sunghoon Song, Kwanwoo Shin, Takhee Lee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diffraction
FETs
field effect transistor
Gold
Materials science and technology
Nanoscale devices
nanowire
Powders
proton
Protons
Scanning electron microscopy
Substrates
Zinc oxide
ZnO
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Beschreibung
Zusammenfassung:ZnO nanowires (NWs) are synthesized by thermal evaporation method. The ZnO nanowire field-effect transistors (FETs) are fabricated and characterized. The fabricated FETs exhibit transconductance of 5.3 nS, mobility of 10.2 cm 2 /V sec, and on/off current ratio of 10 5 . ZnO NW-FET devices exposed to high energy (35 MeV) proton irradiation exhibit punch-through and threshold voltage shift.
DOI:10.1109/NMDC.2006.4388820