Nano-CMOS scaling: Novel devices and materials

Nano-CMOS scaling: Novel devices and materials

This paper will review recent progress of innovative devices and materials for nano-CMOS technology. This paper will discuss (1) various mobility enhancement techniques for faster carrier, (2) new materials and structures for device scaling, and (3) novel contact and silicide technology for parasiti...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Meikei Ieong
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitive sensors
CMOS
CMOS technology
Device scaling
Dielectric materials
Dielectric substrates
Electrodes
MOSFETs
Nanoscale devices
Orientationeffects
parasitic resistance
Silicides
Space technology
strained-silicon
Threshold voltage
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Beschreibung
Zusammenfassung:This paper will review recent progress of innovative devices and materials for nano-CMOS technology. This paper will discuss (1) various mobility enhancement techniques for faster carrier, (2) new materials and structures for device scaling, and (3) novel contact and silicide technology for parasitic resistance reduction.
DOI:10.1109/NMDC.2006.4388702