Error-resistant Single Qubit Gates with Trapped Ions

Error-resistant Single Qubit Gates with Trapped Ions

This study presents single qubit gates with trapped ions that are robust against experimental imperfections over a wide range of parameters. In particular it is shown that errors caused by an inaccurate setting of either frequency, amplitude, or duration of the driving field, or of a combination of...

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Bibliographische Detailangaben
Hauptverfasser: Timoney, N., Elman, V., Weiss, C., Johanning, M., Wunderlich, Chr, Neuhauser, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Error correction
Error probability
Frequency
Information processing
Optimal control
Pulse measurements
Pulse shaping methods
Quantum computing
Quantum mechanics
Robustness
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Beschreibung
Zusammenfassung:This study presents single qubit gates with trapped ions that are robust against experimental imperfections over a wide range of parameters. In particular it is shown that errors caused by an inaccurate setting of either frequency, amplitude, or duration of the driving field, or of a combination of these errors are tolerable when a suitable sequence of radiation pulses, or a shaped pulse is applied instead of, for instance, a single rectangular pi-pulse. Thus an essential prerequisite for scalable quantum computation with trapped ions is demonstrated.
DOI:10.1109/CLEOE-IQEC.2007.4386765