High-power, high-brightness, tunable GaSb-based VECSEL at 2.X μm
High-power, high-brightness, tunable GaSb-based VECSEL emitting in the 2.0-2.4 μm wavelength range is characterized. CW output power vs. absorbed pump power of a diamond-bonded 2.3 μm VECSEL for several heat sink temperatures is studied. Finite element model is used to analyze the heat transport in...
Gespeichert in:
Hauptverfasser: | , , , , , , , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | High-power, high-brightness, tunable GaSb-based VECSEL emitting in the 2.0-2.4 μm wavelength range is characterized. CW output power vs. absorbed pump power of a diamond-bonded 2.3 μm VECSEL for several heat sink temperatures is studied. Finite element model is used to analyze the heat transport in a GaSb-based VECSEL with an intracavity diamond heatspreader. The tuning characteristics of the VECSEL is also studied. |
---|---|
DOI: | 10.1109/CLEOE-IQEC.2007.4385923 |