High-power, high-brightness, tunable GaSb-based VECSEL at 2.X μm

High-power, high-brightness, tunable GaSb-based VECSEL emitting in the 2.0-2.4 μm wavelength range is characterized. CW output power vs. absorbed pump power of a diamond-bonded 2.3 μm VECSEL for several heat sink temperatures is studied. Finite element model is used to analyze the heat transport in...

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Hauptverfasser: Rattunde, M., Schulz, N., Ritzenthaler, C., Rosener, B., Manz, C., Kohler, K., Wagner, J., Hopkins, J.-M., Kemp, A.J., Maclean, A.J., Dawson, M.D., Burns, D.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:High-power, high-brightness, tunable GaSb-based VECSEL emitting in the 2.0-2.4 μm wavelength range is characterized. CW output power vs. absorbed pump power of a diamond-bonded 2.3 μm VECSEL for several heat sink temperatures is studied. Finite element model is used to analyze the heat transport in a GaSb-based VECSEL with an intracavity diamond heatspreader. The tuning characteristics of the VECSEL is also studied.
DOI:10.1109/CLEOE-IQEC.2007.4385923