Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs

Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN sub...

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Hauptverfasser: Nakamura, S., DenBaars, S.P., Speck, J.S., Schmidt, M.C., Kim, K.-C., Farrell, R.M., Feezell, D.F., Cohen, D.A., Saito, M., Sato, H., Asamizu, H., Tyagi, A., Zhong, H., Masui, H., Fellows, N.N., Iza, M., Hashimoto, T., Fujito, K.
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creator Nakamura, S.
DenBaars, S.P.
Speck, J.S.
Schmidt, M.C.
Kim, K.-C.
Farrell, R.M.
Feezell, D.F.
Cohen, D.A.
Saito, M.
Sato, H.
Asamizu, H.
Tyagi, A.
Zhong, H.
Masui, H.
Fellows, N.N.
Iza, M.
Hashimoto, T.
Fujito, K.
description Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.
doi_str_mv 10.1109/LEOS.2007.4382699
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language eng
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Chemicals
Diode lasers
Electroluminescence
Fabrication
Gallium nitride
Laboratories
Light emitting diodes
Piezoelectric polarization
Power generation
Power lasers
title Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs
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