Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs
Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN sub...
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creator | Nakamura, S. DenBaars, S.P. Speck, J.S. Schmidt, M.C. Kim, K.-C. Farrell, R.M. Feezell, D.F. Cohen, D.A. Saito, M. Sato, H. Asamizu, H. Tyagi, A. Zhong, H. Masui, H. Fellows, N.N. Iza, M. Hashimoto, T. Fujito, K. |
description | Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates. |
doi_str_mv | 10.1109/LEOS.2007.4382699 |
format | Conference Proceeding |
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The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.</abstract><pub>IEEE</pub><doi>10.1109/LEOS.2007.4382699</doi><tpages>2</tpages></addata></record> |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Chemicals Diode lasers Electroluminescence Fabrication Gallium nitride Laboratories Light emitting diodes Piezoelectric polarization Power generation Power lasers |
title | Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs |
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