Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs

Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs

Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN sub...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Nakamura, S., DenBaars, S.P., Speck, J.S., Schmidt, M.C., Kim, K.-C., Farrell, R.M., Feezell, D.F., Cohen, D.A., Saito, M., Sato, H., Asamizu, H., Tyagi, A., Zhong, H., Masui, H., Fellows, N.N., Iza, M., Hashimoto, T., Fujito, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemicals
Diode lasers
Electroluminescence
Fabrication
Gallium nitride
Laboratories
Light emitting diodes
Piezoelectric polarization
Power generation
Power lasers
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2007.4382699