Silicon nanophotonic wire structures fabricated by 193nm optical lithography

Silicon nanophotonic wire structures fabricated by 193nm optical lithography

We demonstrate the use of 193 nm optical lithography for fabricating nanophotonic wire structures on silicon-on-insulator (SOI) technology. We present fabrication and measurement result on wire devices. We report a propagation loss of 2.8 dB/cm for 450times220 nm photonic wire.

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Bibliographische Detailangaben
Hauptverfasser: Selvaraja, S.K., Jaenen, P., Beckx, S., Bogaert, W., Dumon, P., Van Thourout, D., Bates, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
Coatings
Etching
Lithography
Nanostructures
Optical device fabrication
Photonics
Resists
Silicon
Wire
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Beschreibung
Zusammenfassung:We demonstrate the use of 193 nm optical lithography for fabricating nanophotonic wire structures on silicon-on-insulator (SOI) technology. We present fabrication and measurement result on wire devices. We report a propagation loss of 2.8 dB/cm for 450times220 nm photonic wire.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2007.4382268