Impact of Process Variation on Nanowire and Nanotube Device Performance

Impact of Process Variation on Nanowire and Nanotube Device Performance

We present an in-depth analysis of the nanowire and nanotube device performance under process variability. While every process parameter variation drastically affects the conventional MOSFET performance, we found that nanowire/nanotube FETs are significantly (> 4X) less sensitive to many process...

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Hauptverfasser: Paul, B.C., Fujita, S., Okajima, M., Lee, T., Wong, H.S.P., Nishi, Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Carbon nanotubes
FETs
FinFETs
Geometry
Lithography
MOSFET circuits
Nanoscale devices
Nanotube devices
Wire
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creator Paul, B.C.
Fujita, S.
Okajima, M.
Lee, T.
Wong, H.S.P.
Nishi, Y.
description We present an in-depth analysis of the nanowire and nanotube device performance under process variability. While every process parameter variation drastically affects the conventional MOSFET performance, we found that nanowire/nanotube FETs are significantly (> 4X) less sensitive to many process parameter variations.
doi_str_mv 10.1109/DRC.2007.4373749
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subjects Capacitance
Carbon nanotubes
FETs
FinFETs
Geometry
Lithography
MOSFET circuits
Nanoscale devices
Nanotube devices
Wire
title Impact of Process Variation on Nanowire and Nanotube Device Performance
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