Impact of Process Variation on Nanowire and Nanotube Device Performance

Impact of Process Variation on Nanowire and Nanotube Device Performance

We present an in-depth analysis of the nanowire and nanotube device performance under process variability. While every process parameter variation drastically affects the conventional MOSFET performance, we found that nanowire/nanotube FETs are significantly (> 4X) less sensitive to many process...

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Bibliographische Detailangaben
Hauptverfasser: Paul, B.C., Fujita, S., Okajima, M., Lee, T., Wong, H.S.P., Nishi, Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Carbon nanotubes
FETs
FinFETs
Geometry
Lithography
MOSFET circuits
Nanoscale devices
Nanotube devices
Wire
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Beschreibung
Zusammenfassung:We present an in-depth analysis of the nanowire and nanotube device performance under process variability. While every process parameter variation drastically affects the conventional MOSFET performance, we found that nanowire/nanotube FETs are significantly (> 4X) less sensitive to many process parameter variations.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2007.4373749