Technique for Oxidation Parameters Definition, Based on Investigation of Defects Formation Images in Silicon Inversion MOS - Structures

Technique for Oxidation Parameters Definition, Based on Investigation of Defects Formation Images in Silicon Inversion MOS - Structures

Presented in this paper is the model allowing detecting some of silicon oxidation parameters (distribution of oxygen concentration at the depth, Wegard factors, relative tension), designed on the basis of investigations regarding defects formation in the near-surface of silicon inversion MOS-structu...

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Bibliographische Detailangaben
Hauptverfasser: Smyntyna, V.A., Kulinich, O.A., Glauberman, M.A., Chemeresyuk, G.G., Yatsunskiy, I.R., Sviridova, O.V.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Hafnium
Oxidation
Silicon
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Beschreibung
Zusammenfassung:Presented in this paper is the model allowing detecting some of silicon oxidation parameters (distribution of oxygen concentration at the depth, Wegard factors, relative tension), designed on the basis of investigations regarding defects formation in the near-surface of silicon inversion MOS-structures.
DOI:10.1109/CRMICO.2007.4368849