High Power Pseudomorphic Hemts' with Doped Channel

The design principles and technology of growth of pseudomorphic AlGaAs/InGaAs heterostructure with silicon-doped canal for high frequency high power transistors as well as fabrication technology of the transistors were developed. Special attention has been paid to growth of the AlGaAs/InGaAs heteroj...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Rakov, Yu. N., Toropov, A. I., Mjakishev, Yu. B., Zhuravlev, K. S., Chibaev, V. P.
Format:	Tagungsbericht
Sprache:	eng ; rus
Schlagworte:	Electrons Gallium arsenide Indium gallium arsenide PHEMTs
Online-Zugang:	Volltext bestellen
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