High Power Pseudomorphic Hemts' with Doped Channel

High Power Pseudomorphic Hemts' with Doped Channel

The design principles and technology of growth of pseudomorphic AlGaAs/InGaAs heterostructure with silicon-doped canal for high frequency high power transistors as well as fabrication technology of the transistors were developed. Special attention has been paid to growth of the AlGaAs/InGaAs heteroj...

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Bibliographische Detailangaben
Hauptverfasser: Rakov, Yu. N., Toropov, A. I., Mjakishev, Yu. B., Zhuravlev, K. S., Chibaev, V. P.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Electrons
Gallium arsenide
Indium gallium arsenide
PHEMTs
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Beschreibung
Zusammenfassung:The design principles and technology of growth of pseudomorphic AlGaAs/InGaAs heterostructure with silicon-doped canal for high frequency high power transistors as well as fabrication technology of the transistors were developed. Special attention has been paid to growth of the AlGaAs/InGaAs heterojunction. PHEMTs' with the specific output power of 1.1 W/mm, PAE of 45.6 % and power gain of 6.8 dB at 17.7 GHz have been fabricated.
DOI:10.1109/CRMICO.2007.4368848