Heat Generation in High Power hemt's Size Estimashion

A simple model for the heat generation area size depending on HEMT topology and active layers properties is developed. It is shown that real heat generation area size is much less than transistor structure period and the gate drain distance.

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Hauptverfasser: Berejnova, P.V., Lukashin, V.M., Pashkovskii, A.B.
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creator Berejnova, P.V.
Lukashin, V.M.
Pashkovskii, A.B.
description A simple model for the heat generation area size depending on HEMT topology and active layers properties is developed. It is shown that real heat generation area size is much less than transistor structure period and the gate drain distance.
doi_str_mv 10.1109/CRMICO.2007.4368652
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identifier ISBN: 9789663350127
ispartof 2007 17th International Crimean Conference - Microwave & Telecommunication Technology, 2007, p.119-120
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language eng ; rus
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Electromagnetic heating
Electron mobility
Gallium arsenide
HEMTs
Power generation
title Heat Generation in High Power hemt's Size Estimashion
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