Heat Generation in High Power hemt's Size Estimashion

Heat Generation in High Power hemt's Size Estimashion

A simple model for the heat generation area size depending on HEMT topology and active layers properties is developed. It is shown that real heat generation area size is much less than transistor structure period and the gate drain distance.

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Bibliographische Detailangaben
Hauptverfasser: Berejnova, P.V., Lukashin, V.M., Pashkovskii, A.B.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Electromagnetic heating
Electron mobility
Gallium arsenide
HEMTs
Power generation
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Beschreibung
Zusammenfassung:A simple model for the heat generation area size depending on HEMT topology and active layers properties is developed. It is shown that real heat generation area size is much less than transistor structure period and the gate drain distance.
DOI:10.1109/CRMICO.2007.4368652