Broadband Detectors of EHF Region on the Basis of Semimetal B1-XSBX

Broadband Detectors of EHF Region on the Basis of Semimetal B1-XSBX

Microwave radiation detectors on the basis of semimetal B 1-x SB x in the frequency band 120-270 GHz for the T = 300 K have been experimentally investigated. Voltage -power sensitivity p = (2-3) V/W has been determined.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Plaksiy, V.T., Arkhipov, A.V., Dyadchenko, A.V., Prokhorov, E.D., Chueshkov, D.P.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Bismuth
Geometry
Infrared detectors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Microwave radiation detectors on the basis of semimetal B 1-x SB x in the frequency band 120-270 GHz for the T = 300 K have been experimentally investigated. Voltage -power sensitivity p = (2-3) V/W has been determined.
DOI:10.1109/CRMICO.2007.4368640