X-band MMIC Low-Noise Amplifier Based on 0.15 μm GaAs Phemt Technology

X-band MMIC Low-Noise Amplifier Based on 0.15 μm GaAs Phemt Technology

The design and fabrication of X-band MMIC low-noise amplifier (LNA) based on 0.15 μm GaAs pHEMT technology is presented. The design and fabrication of X-band MMIC LNA is presented. MMIC is implemented with 0.15 mum pHEMT GaAs technology developed in the Institute of Microwave Semiconductor Electroni...

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Hauptverfasser: Mokerov, V.G., Gunter, V.Ya, Arzhanov, S.N., Fedorov, Yu.V., Scherbakova, M.Yu, Babak, L.I., Barov, A.A., Cherkashin, M.V., Sheherman, F.I.
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Gain measurement
Gallium arsenide
Low-noise amplifiers
MMICs
PHEMTs
Probes
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Zusammenfassung:The design and fabrication of X-band MMIC low-noise amplifier (LNA) based on 0.15 μm GaAs pHEMT technology is presented. The design and fabrication of X-band MMIC LNA is presented. MMIC is implemented with 0.15 mum pHEMT GaAs technology developed in the Institute of Microwave Semiconductor Electronics (Russia). Two-stage LNA is designed with using "visual" design CAD tools. In 7-10 GHz, it provides power gain G = 15.5 -17 dB, noise figure from 2.1 to 2.9 dB, input and output return losses from -8 to -12 dB, and linear output power of +6 dBm.
DOI:10.1109/CRMICO.2007.4368632