A Phase Change Memory Compact Model for Multilevel Applications
In this letter, we show a compact model that describes the main electrical features of phase change memory (PCM) devices. The model coherently reproduces the behavior of both SET and RESET states with the description of the physics of involved phenomena for different bias and temperature conditions....
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| Veröffentlicht in: | IEEE electron device letters 2007-11, Vol.28 (11), p.973-975 |
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| container_end_page | 975 |
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| container_issue | 11 |
| container_start_page | 973 |
| container_title | IEEE electron device letters |
| container_volume | 28 |
| creator | Ventrice, D. Fantini, P. Redaelli, A. Pirovano, A. Benvenuti, A. Pellizzer, F. |
| description | In this letter, we show a compact model that describes the main electrical features of phase change memory (PCM) devices. The model coherently reproduces the behavior of both SET and RESET states with the description of the physics of involved phenomena for different bias and temperature conditions. For arbitrary programming pulses, the model is able to generate intermediate states with mixed phase distributions and, thus, with resistance values between the SET and RESET ones. The proposed model is therefore a precious tool for the design of multilevel PCM applications. |
| doi_str_mv | 10.1109/LED.2007.907288 |
| format | Article |
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The model coherently reproduces the behavior of both SET and RESET states with the description of the physics of involved phenomena for different bias and temperature conditions. For arbitrary programming pulses, the model is able to generate intermediate states with mixed phase distributions and, thus, with resistance values between the SET and RESET ones. The proposed model is therefore a precious tool for the design of multilevel PCM applications.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2007.907288</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amorphous materials ; Applied sciences ; Coherence ; Compact model ; Crystallization ; Design. Technologies. Operation analysis. Testing ; Devices ; Electronics ; Exact sciences and technology ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Mathematical models ; Multilevel ; multilevel (ML) ; Nonvolatile memory ; Phase change ; Phase change materials ; Phase change memory ; phase change memory (PCM) ; Phase distribution ; Physics ; Programming ; Pulse generation ; Resistors ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Temperature ; Voltage</subject><ispartof>IEEE electron device letters, 2007-11, Vol.28 (11), p.973-975</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The model coherently reproduces the behavior of both SET and RESET states with the description of the physics of involved phenomena for different bias and temperature conditions. For arbitrary programming pulses, the model is able to generate intermediate states with mixed phase distributions and, thus, with resistance values between the SET and RESET ones. The proposed model is therefore a precious tool for the design of multilevel PCM applications.</description><subject>Amorphous materials</subject><subject>Applied sciences</subject><subject>Coherence</subject><subject>Compact model</subject><subject>Crystallization</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Mathematical models</subject><subject>Multilevel</subject><subject>multilevel (ML)</subject><subject>Nonvolatile memory</subject><subject>Phase change</subject><subject>Phase change materials</subject><subject>Phase change memory</subject><subject>phase change memory (PCM)</subject><subject>Phase distribution</subject><subject>Physics</subject><subject>Programming</subject><subject>Pulse generation</subject><subject>Resistors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><topic>Temperature</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ventrice, D.</creatorcontrib><creatorcontrib>Fantini, P.</creatorcontrib><creatorcontrib>Redaelli, A.</creatorcontrib><creatorcontrib>Pirovano, A.</creatorcontrib><creatorcontrib>Benvenuti, A.</creatorcontrib><creatorcontrib>Pellizzer, F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ventrice, D.</au><au>Fantini, P.</au><au>Redaelli, A.</au><au>Pirovano, A.</au><au>Benvenuti, A.</au><au>Pellizzer, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Phase Change Memory Compact Model for Multilevel Applications</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2007-11-01</date><risdate>2007</risdate><volume>28</volume><issue>11</issue><spage>973</spage><epage>975</epage><pages>973-975</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In this letter, we show a compact model that describes the main electrical features of phase change memory (PCM) devices. The model coherently reproduces the behavior of both SET and RESET states with the description of the physics of involved phenomena for different bias and temperature conditions. For arbitrary programming pulses, the model is able to generate intermediate states with mixed phase distributions and, thus, with resistance values between the SET and RESET ones. The proposed model is therefore a precious tool for the design of multilevel PCM applications.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2007.907288</doi><tpages>3</tpages></addata></record> |
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| subjects | Amorphous materials Applied sciences Coherence Compact model Crystallization Design. Technologies. Operation analysis. Testing Devices Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Mathematical models Multilevel multilevel (ML) Nonvolatile memory Phase change Phase change materials Phase change memory phase change memory (PCM) Phase distribution Physics Programming Pulse generation Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Voltage |
| title | A Phase Change Memory Compact Model for Multilevel Applications |
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