A Phase Change Memory Compact Model for Multilevel Applications

In this letter, we show a compact model that describes the main electrical features of phase change memory (PCM) devices. The model coherently reproduces the behavior of both SET and RESET states with the description of the physics of involved phenomena for different bias and temperature conditions....

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Veröffentlicht in:	IEEE electron device letters 2007-11, Vol.28 (11), p.973-975
Hauptverfasser:	Ventrice, D., Fantini, P., Redaelli, A., Pirovano, A., Benvenuti, A., Pellizzer, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Applied sciences Coherence Compact model Crystallization Design. Technologies. Operation analysis. Testing Devices Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Mathematical models Multilevel multilevel (ML) Nonvolatile memory Phase change Phase change materials Phase change memory phase change memory (PCM) Phase distribution Physics Programming Pulse generation Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Voltage
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Beschreibung
Zusammenfassung:	In this letter, we show a compact model that describes the main electrical features of phase change memory (PCM) devices. The model coherently reproduces the behavior of both SET and RESET states with the description of the physics of involved phenomena for different bias and temperature conditions. For arbitrary programming pulses, the model is able to generate intermediate states with mixed phase distributions and, thus, with resistance values between the SET and RESET ones. The proposed model is therefore a precious tool for the design of multilevel PCM applications.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2007.907288