Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors
We demonstrate that, in addition to the conventional high-order parasitic effects such as skin and proximity effect, as well as substrate coupling, a novel term of substrate parasitic inductance needs to be introduced in the equivalent circuit for silicon-based transmission lines and on-chip spiral...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2007-11, Vol.28 (11), p.1025-1028 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1028 |
|---|---|
| container_issue | 11 |
| container_start_page | 1025 |
| container_title | IEEE electron device letters |
| container_volume | 28 |
| creator | Huang, Fengyi Lu, Jingxue Zhu, Yufeng Jiang, Nan Wang, Xianchao Chi, Yusong |
| description | We demonstrate that, in addition to the conventional high-order parasitic effects such as skin and proximity effect, as well as substrate coupling, a novel term of substrate parasitic inductance needs to be introduced in the equivalent circuit for silicon-based transmission lines and on-chip spiral inductors in order to fully describe the nonlinear features of substrate-characteristic functions at a high frequency. The present model is verified for inductors fabricated using a 0.18-mum CMOS process. |
| doi_str_mv | 10.1109/LED.2007.906800 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_4367552</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4367552</ieee_id><sourcerecordid>34500130</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-a79ff9fb8f16746d09f04b2deb31e5628cf88dbe1b2b5412ee13d2b901da5e193</originalsourceid><addsrcrecordid>eNp9kc2LFDEQxYMoOK6ePXgJgnrq2VQ-upOjO466MLDCrueQpCuYpTc9Jt0H_3uzzKDgwVMd6vceVe8R8hrYFoCZy8P-05YzNmwN6zVjT8gGlNIdU714SjZskNAJYP1z8qLWe8ZAykFuiN_HiGGhc6S3q69LcQvSb664mpYU6HUe17C4HJDOmd6mKYU5d1eu4kjvisv1IdWa2uqQMlbq8khvcrf7kY5n6VzqS_Isuqniq_O8IN8_7-92X7vDzZfr3cdDF4SGpXODidFEryP0g-xHZiKTno_oBaDquQ5R69EjeO6VBI4IYuTeMBidQjDignw4-R7L_HPFuth2XMBpchnntVrDe8E106KR7_9LCqlaQII18O0_4P28lty-sAY4aGMAGnR5gkKZay0Y7bGkB1d-WWD2sRrbqrGP1dhTNU3x7mzranBTbEGGVP_KDBjJ9dC4NycuIeKftRT9oBQXvwG9Z5ZT</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912189911</pqid></control><display><type>article</type><title>Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors</title><source>IEEE Electronic Library (IEL)</source><creator>Huang, Fengyi ; Lu, Jingxue ; Zhu, Yufeng ; Jiang, Nan ; Wang, Xianchao ; Chi, Yusong</creator><creatorcontrib>Huang, Fengyi ; Lu, Jingxue ; Zhu, Yufeng ; Jiang, Nan ; Wang, Xianchao ; Chi, Yusong</creatorcontrib><description>We demonstrate that, in addition to the conventional high-order parasitic effects such as skin and proximity effect, as well as substrate coupling, a novel term of substrate parasitic inductance needs to be introduced in the equivalent circuit for silicon-based transmission lines and on-chip spiral inductors in order to fully describe the nonlinear features of substrate-characteristic functions at a high frequency. The present model is verified for inductors fabricated using a 0.18-mum CMOS process.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2007.906800</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; CMOS ; Coupling circuits ; Design. Technologies. Operation analysis. Testing ; Distributed parameter circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Equivalent circuits ; Exact sciences and technology ; Frequency ; High frequencies ; Inductance ; Inductor ; Inductors ; Integrated circuits ; Magnetic devices ; Mathematical models ; parasitic effect ; Proximity effect ; Proximity effect (electricity) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; silicon-based transmission line ; Skin ; Spirals ; substrate inductance ; Transmission lines</subject><ispartof>IEEE electron device letters, 2007-11, Vol.28 (11), p.1025-1028</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-a79ff9fb8f16746d09f04b2deb31e5628cf88dbe1b2b5412ee13d2b901da5e193</citedby><cites>FETCH-LOGICAL-c381t-a79ff9fb8f16746d09f04b2deb31e5628cf88dbe1b2b5412ee13d2b901da5e193</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4367552$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4367552$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19194287$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Huang, Fengyi</creatorcontrib><creatorcontrib>Lu, Jingxue</creatorcontrib><creatorcontrib>Zhu, Yufeng</creatorcontrib><creatorcontrib>Jiang, Nan</creatorcontrib><creatorcontrib>Wang, Xianchao</creatorcontrib><creatorcontrib>Chi, Yusong</creatorcontrib><title>Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We demonstrate that, in addition to the conventional high-order parasitic effects such as skin and proximity effect, as well as substrate coupling, a novel term of substrate parasitic inductance needs to be introduced in the equivalent circuit for silicon-based transmission lines and on-chip spiral inductors in order to fully describe the nonlinear features of substrate-characteristic functions at a high frequency. The present model is verified for inductors fabricated using a 0.18-mum CMOS process.</description><subject>Applied sciences</subject><subject>CMOS</subject><subject>Coupling circuits</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Distributed parameter circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Equivalent circuits</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>High frequencies</subject><subject>Inductance</subject><subject>Inductor</subject><subject>Inductors</subject><subject>Integrated circuits</subject><subject>Magnetic devices</subject><subject>Mathematical models</subject><subject>parasitic effect</subject><subject>Proximity effect</subject><subject>Proximity effect (electricity)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>silicon-based transmission line</subject><subject>Skin</subject><subject>Spirals</subject><subject>substrate inductance</subject><subject>Transmission lines</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc2LFDEQxYMoOK6ePXgJgnrq2VQ-upOjO466MLDCrueQpCuYpTc9Jt0H_3uzzKDgwVMd6vceVe8R8hrYFoCZy8P-05YzNmwN6zVjT8gGlNIdU714SjZskNAJYP1z8qLWe8ZAykFuiN_HiGGhc6S3q69LcQvSb664mpYU6HUe17C4HJDOmd6mKYU5d1eu4kjvisv1IdWa2uqQMlbq8khvcrf7kY5n6VzqS_Isuqniq_O8IN8_7-92X7vDzZfr3cdDF4SGpXODidFEryP0g-xHZiKTno_oBaDquQ5R69EjeO6VBI4IYuTeMBidQjDignw4-R7L_HPFuth2XMBpchnntVrDe8E106KR7_9LCqlaQII18O0_4P28lty-sAY4aGMAGnR5gkKZay0Y7bGkB1d-WWD2sRrbqrGP1dhTNU3x7mzranBTbEGGVP_KDBjJ9dC4NycuIeKftRT9oBQXvwG9Z5ZT</recordid><startdate>20071101</startdate><enddate>20071101</enddate><creator>Huang, Fengyi</creator><creator>Lu, Jingxue</creator><creator>Zhu, Yufeng</creator><creator>Jiang, Nan</creator><creator>Wang, Xianchao</creator><creator>Chi, Yusong</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20071101</creationdate><title>Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors</title><author>Huang, Fengyi ; Lu, Jingxue ; Zhu, Yufeng ; Jiang, Nan ; Wang, Xianchao ; Chi, Yusong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-a79ff9fb8f16746d09f04b2deb31e5628cf88dbe1b2b5412ee13d2b901da5e193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>CMOS</topic><topic>Coupling circuits</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Distributed parameter circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Equivalent circuits</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>High frequencies</topic><topic>Inductance</topic><topic>Inductor</topic><topic>Inductors</topic><topic>Integrated circuits</topic><topic>Magnetic devices</topic><topic>Mathematical models</topic><topic>parasitic effect</topic><topic>Proximity effect</topic><topic>Proximity effect (electricity)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>silicon-based transmission line</topic><topic>Skin</topic><topic>Spirals</topic><topic>substrate inductance</topic><topic>Transmission lines</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Fengyi</creatorcontrib><creatorcontrib>Lu, Jingxue</creatorcontrib><creatorcontrib>Zhu, Yufeng</creatorcontrib><creatorcontrib>Jiang, Nan</creatorcontrib><creatorcontrib>Wang, Xianchao</creatorcontrib><creatorcontrib>Chi, Yusong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huang, Fengyi</au><au>Lu, Jingxue</au><au>Zhu, Yufeng</au><au>Jiang, Nan</au><au>Wang, Xianchao</au><au>Chi, Yusong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2007-11-01</date><risdate>2007</risdate><volume>28</volume><issue>11</issue><spage>1025</spage><epage>1028</epage><pages>1025-1028</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We demonstrate that, in addition to the conventional high-order parasitic effects such as skin and proximity effect, as well as substrate coupling, a novel term of substrate parasitic inductance needs to be introduced in the equivalent circuit for silicon-based transmission lines and on-chip spiral inductors in order to fully describe the nonlinear features of substrate-characteristic functions at a high frequency. The present model is verified for inductors fabricated using a 0.18-mum CMOS process.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2007.906800</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2007-11, Vol.28 (11), p.1025-1028 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_ieee_primary_4367552 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences CMOS Coupling circuits Design. Technologies. Operation analysis. Testing Distributed parameter circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Equivalent circuits Exact sciences and technology Frequency High frequencies Inductance Inductor Inductors Integrated circuits Magnetic devices Mathematical models parasitic effect Proximity effect Proximity effect (electricity) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices silicon-based transmission line Skin Spirals substrate inductance Transmission lines |
| title | Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T12%3A55%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Substrate%20Parasitic%20Inductance%20on%20Silicon-Based%20Transmission%20Lines%20and%20On-Chip%20Inductors&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Huang,%20Fengyi&rft.date=2007-11-01&rft.volume=28&rft.issue=11&rft.spage=1025&rft.epage=1028&rft.pages=1025-1028&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2007.906800&rft_dat=%3Cproquest_RIE%3E34500130%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912189911&rft_id=info:pmid/&rft_ieee_id=4367552&rfr_iscdi=true |