Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors

We demonstrate that, in addition to the conventional high-order parasitic effects such as skin and proximity effect, as well as substrate coupling, a novel term of substrate parasitic inductance needs to be introduced in the equivalent circuit for silicon-based transmission lines and on-chip spiral...

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Veröffentlicht in:	IEEE electron device letters 2007-11, Vol.28 (11), p.1025-1028
Hauptverfasser:	Huang, Fengyi, Lu, Jingxue, Zhu, Yufeng, Jiang, Nan, Wang, Xianchao, Chi, Yusong
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CMOS Coupling circuits Design. Technologies. Operation analysis. Testing Distributed parameter circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Equivalent circuits Exact sciences and technology Frequency High frequencies Inductance Inductor Inductors Integrated circuits Magnetic devices Mathematical models parasitic effect Proximity effect Proximity effect (electricity) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices silicon-based transmission line Skin Spirals substrate inductance Transmission lines
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Beschreibung
Zusammenfassung:	We demonstrate that, in addition to the conventional high-order parasitic effects such as skin and proximity effect, as well as substrate coupling, a novel term of substrate parasitic inductance needs to be introduced in the equivalent circuit for silicon-based transmission lines and on-chip spiral inductors in order to fully describe the nonlinear features of substrate-characteristic functions at a high frequency. The present model is verified for inductors fabricated using a 0.18-mum CMOS process.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2007.906800